Samsung

Samsung 990 EVO Plus 1TB M.2 NVMe SSD PCIe Gen 4 - Read/Write up to 7150MB/s / 6300MB/s

$299
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Upgrade everyday performance

Samsung 990 EVO Plus 1TB M.2 NVMe SSD PCIe Gen 4 - Read/Write up to 7150MB/s / 6300MB/s

 

Spectacular speed everyday

Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.

* Sequential and random write performance was measured with Intelligent Turbo Write technology being activated. Intelligent Turbo Write operates only within a specific data transfer size. Performance may vary depending on SSD's firmware, system hardware & configuration and other factors. For detailed information, please contact your local service center.* Test system configuration: AMD Ryzen9 7950x 16-Core Processor CPU @ 4.5GHz, DDR5 4800MHz 16GBx2 (PC5-38400), OS-Windows 11 Pro 64bit, Chipset - ASRock X670E Taichi* To maximize the performance of the 990 EVO Plus, please check whether your system supports PCIe® 4.0 or PCIe® 5.0 at the Intel or AMD website.* Product image shown for illustrative purposes only; actual product may differ.

Samsung 990 EVO Plus 1TB M.2 NVMe SSD PCIe Gen 4 - Read/Write up to 7150MB/s / 6300MB/s

 

Increased power efficiency

Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73%, compared to previous model, achieving the same power level and thermal control with less power consumption. Stay focused on work or play with no overheating or battery life worries.

*As compared to the previous model (990 EVO)

Samsung 990 EVO Plus 1TB M.2 NVMe SSD PCIe Gen 4 - Read/Write up to 7150MB/s / 6300MB/s

 

SPECIFICATIONS

General Feature

Application

Client PCs

Capacity

1,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

Form Factor

M.2 (2280)

Interface

PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0

Dimension (WxHxD)

Max 80.15 x Max 22.15 x Max 2.38 mm

Weight

Max 9.0g Weight

Storage Memory

Samsung V-NAND TLC

Controller

Samsung in-house Controller

Cache Memory

HMB(Host Memory Buffer)

Special Feature

TRIM Support

Supported

S.M.A.R.T Support

Supported

GC (Garbage Collection)

Auto Garbage Collection Algorithm

Encryption Support

AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)

WWN Support

Not supported

Device Sleep Mode Support

Yes

Performance

Sequential Read

Up to 7,150 MB/s * Performance may vary based on system hardware & configuration

Sequential Write

Up to 6,300 MB/s * Performance may vary based on system hardware & configuration

Random Read (4KB, QD32)

Up to 850,000 IOPS * Performance may vary based on system hardware & configuration

Random Write (4KB, QD32)

Up to 1,350,000 IOPS * Performance may vary based on system hardware & configuration

Environment

Average Power Consumption (system level)

Average: Read 4.3 W / Write 4.2 W* Actual power consumption may vary depending on system hardware & configuration

Power consumption (Idle)

Typical 60 mW * Actual power consumption may vary depending on system hardware & configuration

Power Consumption (Device Sleep)

Typical 5 mW * Actual power consumption may vary depending on system hardware & configuration

Allowable Voltage

3.3 V ± 5 % Allowable voltage

Reliability (MTBF)

1.5 Million Hours Reliability (MTBF)

Operating Temperature

0 - 70 C Operating Temperature

Shock

1,500 G & 0.5 ms (Half sine)

Accessories

Installation Kit

Not Available

Software

Management SW

Magician Software for SSD management